BATIO3 Substrates

Crystal System

Tetragona(4m):  13℃< T<132℃

a=3.99Å, c= 4.04Å (at 26℃)

Density

6.02 g/cm3

Melt Point

1612 ℃

Growth Method

TSSG (Top Seeded Solution Growth)

Dielectric Constant

ea=3700 ec=135(unclamped)

ea=2400 ec=60 (clamped)

Refractive Index

515nm

633nm

800nm

no

2.4912

2.4160

2.3681

ne

2.4247

2.3630

2.3235

Transmit Wavelengths

0.43-6.30μm

Photoelectric Coefficient

rT13=8±2 pm/V  rT33=105±10 pm/V  rT42=1300±100 pm/V

Reflectivity of SPPC (at 0 deg. cut）

50 - 70 % for λ = 515 nm(Ce:BaTiO3)

40 - 60 % (Pure BaTiO3) for λ = 515 nm

50 - 80 % for λ = 633 nm(Ce:BaTiO3)

40 - 60 % for λ = 633 nm (Pure BaTiO3)

Two-wave Mixing Coupling Constant

10 -40 cm-1

Absorption Loss

λ: 515nm

λ: 633nm

λ: 800nm

α: 0.285 cm-1

α: 0.108 cm-1

α: 0.033 cm-1

Orientation

<100>,<001>,<110>,<111>, etc.

Orientation Tolerance

±0.5° or better

Dimension

10x10mm, 10x5mm, 5x5mm, etc.

Dimension Tolerance

±0.1 mm or better

Thickness

0.5mm, 1.0mm, etc.

Thickness Tolerance

±0.05 mm or better

Surface Finish

Single side polished (SSP)/Double sides polished (DSP)

Surface Roughness

Ra<10Å
Atomic Particle Microscopy (AFM) test report can be provided.

Package

Class 100 clean bag, Class 1000 super clean room

Note:

The BTO substrates are poled, but with domains

BTO single crystal must be stored in temperature above 13 ℃ to avoid phase transition which will cause twin or domain inside crystal